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p age 1 o f 1 2 p r e l i m i n a r y d a t a s hee t s p e c i f i c a t i o n s i n t h i s d o c u m e n t a r e t e n t a t i v e a n d s u b j e c t t o c hang e . p s 9 3 3 1 l , p s 9 3 3 1 l 2 2 . 5 a o u t p u t c u r r e n t , h i g h c m r , i g b t g a t e dri v e , 6 - p i n s d i p p h o t o c o u p l e r d e s c r i p t i o n t h e p s 9 3 3 1 l a n d p s 9 3 3 1 l 2 a r e o p ti c a l c o u p l e d i s o l a t o r s c o n t a i n i n g a g a a l a s l e d o n t h e i n p u t s i d e a n d a p h o t o d i o d e , a s i g n a l p r o c e s s i n g c i r c u i t a n d p o w e r m o s f e t s o n t h e o u t p u t s i d e o n o n e c h i p . t h e p s 9 3 3 1 l a n d p s 9 3 3 1 l 2 a r e i n 6 - p i n p l a s t i c s d i p ( s h r i n k d u a l i n - l i n e p a c k a g e ) . t h e p s 9 3 3 1 l 2 h a s 8 m m c r e e p a g e d i s t a n c e . t h e m o u n t a r e a o f 6 - p i n p l a s ti c s d i p i s h a l f s i z e o f 8 - p i n d i p . t h e p s 9 3 3 1 l a n d p s 9 3 3 1 l 2 a r e d e s i g n e d s p e c i f i c a l l y f o r h i g h c o m m o n m o d e t r a n s i e n t i m m u n i t y ( cm r) a n d h i g h s w it c h i n g s p e e d . i t i s s u it a b l e f o r d r i v i n g i g b t s a n d m o s f e t s . t h e p s 9 3 3 1 l i s l e a d b e n d i n g t y p e ( g u l l - w i n g ) f o r s u r f a c e m o u n t i n g . t h e p s 9 3 3 1 l 2 i s l e a d b e n d i n g t y p e f o r l o n g c r e e p a g e d i s t a n c e ( g u l l - w i n g ) f o r s u r f a c e m o u n t . f e a t u r e s ? l o n g c r e e p a g e d i s t a n c e ( 8 m m m i n . : p s 9 3 3 1 l 2 ) ? h a l f s i z e o f 8 - p i n d i p ? p e a k o u t p u t c u r r e n t ( 2 . 5 a m a x . , 2 . 0 a m i n . ) ? h i g h s p e e d s w it c h i n g ( t p l h , t p h l = 2 0 0 n s m a x . ) ? h i g h c o m m o n m o d e t r a n s i e n t i m m u n i t y ( cm h , cm l = 5 0 k v / s m i n . ) ? o p e r a ti n g a m b i e n t t e m p e r a t u r e ( 1 2 5 o c) ? e m b o s s e d t a p e p r o d u c t : p s 9 3 3 1 l - e 3 , p s 9 3 3 1 l 2 - e 3 : 2 0 0 0 p c s / r e e l ? p b - f r e e p r o d u c t a p p l i c a t i o n s ? i g bt , p o w e r m o s f e t g a t e d r i v e r ? i n d u s t r i a l i n v e r t e r ? a c s e r v o n o v 3 0 , 2 0 1 2 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 2 of 12 package dimensions ( unit: mm) l ead be nding type (gull-wing) for surface mount l ead be nding type (gull-wing) for long cr eepage distance (surface m ount) a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 3 of 12 photocoupler const ruction parameter ps9331l PS9331L2 air dist ance (min.) 7 mm 8 mm outer creepage distance (min.) 7 mm 8 mm isolation distance (min.) 0.4 mm 0.4 mm ma rking example a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 4 of 12 absolute maximum ratings (t a = 25 ? c, unless otherwise sp ecified) parameter sym bol ratings unit diode forward cu rr ent i f 25 ma peak transient forward cu rrent (pulse width < 1 ? s) i f (tran) 1.0 a reverse voltage v r 5 v power di ssipation *1 p d 45 mw detector high level peak out put cu rrent *2 i oh ( peak) 2.5 a low level peak out put cu rrent *2 i ol ( peak) 2.5 a s upply voltage (v cc ? v ee ) 0 to 35 v output voltage v o 0 to v cc v power di ssipation * 3 p c 250 mw isolation voltage * 4 bv 5 000 vr.m.s. operating frequency f 50 khz operating ambient temperature t a ? 40 to +125 ? c storage temperature t stg ? 55 to +150 ? c notes: *1. reduced to 1.2 mw/ ? c at t a = 110 ? c or more. *2. maximum pulse width = 10 ? s, maximum duty c ycle = 0.5% *3. r educed to 3.9 mw/ ? c at t a = 85 ? c or more. *4. ac voltage for 1 minute at t a = 25 ? c, rh = 60% between input and output. pins 1-3 shorted together, 4-6 shorted together. reco mme nded o perating co nditions parameter sym bol min. typ. max. unit supply voltage (v cc ? v ee ) 15 30 v forward cu rr ent (on) i f (on) 7 10 16 ma forward voltage (off) v f (off) ? 2 0.8 v operating ambient temperature t a ? 40 125 ? c a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 5 of 12 electrical characteristics (at reco mme nded o perating co nditions, v ee = gnd, unless otherwise specified) parameter sym bol conditions min. typ. *1 max. unit diode forward voltage v f i f = 10 ma, t a = 25 ? c 1.35 1.56 1.75 v reverse cu rrent i r v r = 3 v, t a = 25 ? c 10 ? a i nput capacitance c in f = 1 mhz, v f = 0 v 30 pf detector high level output cu rrent i oh v o = (v cc ? 4 v) *2 0.5 2.0 a v o = (v cc ? 15 v) *3 2.0 low level output cu rr ent i ol v o = (v ee + 2.5 v) *2 0.5 2.0 a v o = (v ee + 15 v) *3 2.0 high level output volt age v oh i f = 10 ma, i o = -100 ma *4 v cc ? 3.0 v cc ? 1.3 v low level output voltage v ol i f = 0 ma, i o = 100 ma 0.1 0.5 v high level supply cu rrent i cch i f = 10 ma, i o = 0 ma 1.2 2.0 ma low level supply cu rrent i ccl i f = 0 ma, i o = 0 ma 1.2 2.0 ma c oupled threshold input current (l ? h) i flh i o = 0 ma, v o > 5 v 1.8 5.0 ma threshold input voltage (h ? l) v fhl i o = 0 ma, v o < 5 v 0.8 v notes: *1. typical values at t a = 25 ? c, v cc ? v ee = 30 v. *2. maximum pulse width = 50 ? s, maximum duty c ycle = 0.5%. *3. maximum pulse width = 10 ? s, maximum duty c ycle = 0.2%. *4. v oh is measured with the dc l oad cu rrent in this testing. swit ching characteristics (at reco mme nded o perating co nditions, v ee = gnd, unless otherwise specified) parameter sym bol conditions min. typ. *1 max. unit propagation delay time (l ? h) t plh r g = 10 ? , c g = 10 nf, 150 200 ns propagation delay time (h ? l) t phl f = 10 khz, 150 200 ns pulse width distorti on (pwd) |t phl ? t plh | duty cycle = 50% *2 , 75 ns pr opagation delay time (difference betw een any two products) t phl ? t plh i f = 10 ma ? 90 90 ns rise time t r 40 ns fall time t f 40 ns co mmon m ode transient i mmunity at high level output |cm h | t a = 25 ? c, i f = 10 ma, v cc = 30 v, v cm = 1.5 kv 50 kv/ ? s co mmon m ode transient i mmunity at low level output |cm l | t a = 25 ? c, i f = 0 ma, v cc = 30 v, v cm = 1.5 kv 50 kv/ ? s notes: *1. typical values at t a = 25 ? c, v cc ? v ee = 30 v. *2. this load condition is equivalent to the igbt load at 1 200 v/75 a. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 6 of 12 t est ci rcuit a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 7 of 12 remarks 1. common mode transient immunity at high level output is the maximum value of dv cm /dt at which the output remains high level (e.g. v o > 15 v). 2. common m ode transient i mmunity at low level output is the maximum value of dv cm /dt at which the output remains low level (e.g. v o < 1.0 v). a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 8 of 12 taping specifications ( unit: mm) a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 9 of 12 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 10 of 12 reco mme nded mount pad dimensions (unit: mm) a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 11 of 12 notes on handling ( unit: mm) cautions rega rding noise be aware that when vo ltage is a pp lied su ddenly between the photocoupler s input and output at startup, the output transistor may enter the on state, even if the vo ltage is within the absolute maximum ratings. usage cautions 1. this pr oduct is weak for sta tic el ectricity by designed w ith high-sp eed integrated circuit so protect against sta tic el ectricity when hand ling. 2. board desi gning (1) by-pass capac itor of more than 1.0 p f is used betw een v cc and gnd n ear device. also, ensure that the distance between the leads of the photocoupler and capac itor is no more than 10 mm. (2) when designing the printed wiring board, ensure that the pa ttern of the igbt coll ectors/em itters is not too close to the input block pattern of the photocoupler. if the pattern is too close to the input block and coupling o ccurs, a su dden fluctua tion in the voltage on the igbt output side mi ght aff ect the photocoupler s led input, l eading to malfunc tion or degradation of char acteris tics. (if the pattern n eeds to be close to the in put block, to prevent the led from lighting during the off state due to the abovementioned coup ling, design the input-side circuit so that the bias of the led is reversed, within the ra nge of the r eco mmended opera ting conditi ons, and be sure to thoro ughly evaluate opera tion.) (3) pin 2 (which is an nc *1 pin) can either be co nn ected directly to the gnd pin on the led side or left open. unconn ected pins should not be used as a bypass for signals or for any other sim ilar pur pose b ecause this may degrade the internal noise envir onment of the device. note: *1. nc: non-c onnection (no connection). 3. make sure the rise/fall time of the forward cu rrent is 0.5 p s or less. 4. in order to avoid malfunc ti ons, make sure the rise/fall slope of the supply vo ltage is 3 v/ p s or less. 5 . avoid storage at a high temperature and high humidity. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
prelimi nary document specifications in this docum en t are t entative and subjec t to c hange. ps93 31l, PS9331L2 chapter title p age 12 of 12 caution gaas pr oducts this pr oduct uses gal lium ars enide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? fo llow related laws and ordinances when disposing of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. co mmission a dis posal company able to (with a license to) co llect, tr ansport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemica lly dissolve the pr oduct. ? do not lick the product or in any way a llow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.

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